Control of excitons in multi-layer van der Waals heterostructures

MoS2 Fig1

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS2 and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

E. V. Calman, C. J. Dorow, M. M. Fogler, L. V. Butov, S. Hu, A. Mishchenko, A. K. Geim, Control of excitons in multi-layer van der Waals heterostructures, arXiv:1510.04410 (2015), Appl. Phys. Lett. 108, 101901 (2016).

Indirect excitons in van der Waals heterostructures


All known superfluid and superconducting states of condensed matter are enabled by composite bosons (atoms, molecules, Cooper pairs) made of an even number of fermions. Temperatures where such macroscopic quantum phenomena occur are limited by the lesser of the binding energy and the degeneracy temperature of the bosons. High critical temperature cuprate superconductors set the present record of ~100 K. Here we propose a design for artificially structured materials to rival this record. The main elements of the structure are two monolayers of a transition metal dichalcogenide separated by an atomically thin spacer. Electrons and holes generated in the system would accumulate in the opposite monolayers and form bosonic bound states --- the indirect excitons. The resultant degenerate Bose gas of indirect excitons would exhibit macroscopic occupation of a quantum state and vanishing viscosity at high temperatures.

M.M. Fogler, L.V. Butov, K.S. Novoselov, High-temperature superfluidity with indirect excitons in van der Waals heterostructures, arXiv:1404.1418 (2014), Nature Commun. 5, 4555 (2014).